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A machine learning-assisted model for GaN ohmic contacts regarding the fabrication processes
Gallium nitride (GaN) devices have been successfully commercialized due to their superior performance, especially their high-power …
Zeheng Wang
,
Liang Li
,
Yuanzhe Yao
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An analytical model on the gate control capability in p-GaN gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps
An analytical model considering the buffer acceptor traps is presented in this paper to study the gate control capability in p-GaN gate …
Fangzhou Wang
,
Wanjun Chen
,
Ruize Sun
,
Zeheng Wang
,
Qi Zhou
,
Bo Zhang
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DOI
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Evaluating the traditional chinese medicine (TCM) officially recommended in china for COVID-19 using ontology-based side-effect prediction framework (OSPF) and deep learning
Ethnopharmacological relevance: The novel coronavirus disease (COVID-19) outbreak in Wuhan has imposed a huge influence in terms of …
Zeheng Wang
,
Liang Li
,
Miao Song
,
Jing Yan
,
Junjie Shi
,
Yuanzhe Yao
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DOI
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A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology
In this paper, we designed a low turn-on voltage (VOn) AlGaN/GaN lateral field-effect rectifier (LFER) compatible with p-GaN gate …
Fangzhou Wang
,
Wanjun Chen
,
Zeheng Wang
,
Yuan Wang
,
Jingxue Lai
,
Ruize Sun
,
Qi Zhou
,
Bo Zhang
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DOI
URL
Simulation study of an ultralow switching loss p-GaN gate HEMT with dynamic charge storage mechanism
In this article, a dynamic charge storage mechanism is proposed for designing the p-GaN gate dynamic charge storage …
Fangzhou Wang
,
Wanjun Chen
,
Xiaorui Xu
,
Ruize Sun
,
Zeheng Wang
,
Yun Xia
,
Yajie Xin
,
Chao Liu
,
Qi Zhou
,
Bo Zhang
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DOI
Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors
In this paper, input capacitance (C ISS) of p-GaN gate AlGaN/GaN power high-electron-mobility transistors (HEMTs) is systemically …
Fangzhou Wang
,
Wanjun Chen
,
Xuan Li
,
Ruize Sun
,
Xiaorui Xu
,
Yajie Xin
,
Zeheng Wang
,
Yijun Shi
,
Yun Xia
,
Chao Liu
,
Jianjun Zhou
,
Qi Zhou
,
Bo Zhang
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DOI
URL
Approaching high-accuracy side effect prediction of traditional chinese medicine compound prescription using network embedding and deep learning
In this paper, we realize high-Accuracy side-effect prediction of Traditional Chinese Medicine Compound Prescription by introducing …
Zeheng Wang
,
Liang Li
,
Jing Yan
,
Yuanzhe Yao
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DOI
Approaching ultra-low turn-on voltage in GaN lateral diode
Besides the commercial success in power electronics, GaN-based devices are also considered as a promising candidate in sensors or …
Zeheng Wang
,
Di Yang
,
Junjie Shi
,
Yuanzhe Yao
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DOI
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On the baliga’s figure-of-merits (BFOM) enhancement of a novel GaN nano-pillar vertical field effect transistor (FET) with 2DEG channel and patterned substrate
A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing the on-state resistance (RON) and substrate …
Zeheng Wang
,
Zirui Wang
,
Zhenwei Zhang
,
Di Yang
,
Yuanzhe Yao
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DOI
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Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study
A novel recess-free enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) is proposed. The device features a …
Zeheng Wang
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