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An ontology-based artificial intelligence model for medicine side-effect prediction: taking traditional chinese medicine as an example
In this work, an ontology-based model for AI-assisted medicine side-effect (SE) prediction is developed, where three main components, …
Yuanzhe Yao, Zeheng Wang, Liang Li, Kun Lu, Runyu Liu, Zhiyuan Liu, Jing Yan
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Design and optimization on a novelhigh-performance ultra-thin barrier AlGaN/GaN power HEMT with local charge compensation trench
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge …
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao
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A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensor
Zeheng Wang, Shengji Wang, Zhenwei Zhang, Chunpeng Wang, Di Yang, Xinghuan Chen, Zirui Wang, Jun Cao, Yuanzhe Yao
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A novel technology for turn-on voltage reduction of high-performance lateral heterojunction diode with source-gate shorted anode
A novel lateral heterojunction diode with a low turn-on voltage is proposed in this paper. Verified by theoretical analysis and …
Zeheng Wang, Di Yang, Jun Cao, Fangzhou Wang, Yuanzhe Yao
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Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate
A short channel AlGaN/GaN HEMT with AlGaN/InGaN/AlGaN quantum well plate is proposed and investigated. Benefited by the 2DEG confining …
Zeheng Wang, Jun Cao, Ruize Sun, Fangzhou Wang, Yuanzhe Yao
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Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage
An ultra-low turn-on voltage (VT) Γ-shaped anode AlGaN/GaN Schottky barrier diode (GA-SBD) is proposed via modeling and simulation for …
Zeheng Wang, Wanjun Chen, Fangzhou Wang, Jun Cao, Ruize Sun, Kailin Ren, Yi Luo, Songnan Guo, Zirui Wang, Xiaosheng Jin, Lei Yang, Bo Zhang
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Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate
A novel normally-off AlGaN/GaN HEMT with a recess-free gate featuring field coupling capability is proposed via modeling and simulation …
Zeheng Wang, Jun Cao, Fangzhou Wang, Wanjun Chen, Bo Zhang, Songnan Guo, Yuanzhe Yao
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Simulation study of high‐reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode
Zeheng Wang, Fangzhou Wang, Songnan Guo, Zirui Wang
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Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode
To achieve uniform low turn-on voltage and high reverse blocking capability, an AlGaN/GaN power field effect rectifier with trench …
Fangzhou Wang, Wanjun Chen, Zeheng Wang, Ruize Sun, Jin Wei, Xuan Li, Yijun Shi, Xiaosheng Jin, Xiaorui Xu, Nan Chen, Qi Zhou, Bo Zhang
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Physics of dynamic threshold voltage and steep subthreshold swing in al $_textrm2$ O $_textrm3$ –InAlN–GaN moshemts
The impact of Al2O3–InAlN interface traps on the switching characteristics of Al2O3–InAlN–GaN MOSHEMTs was examined using …
Q Zhou, Z H Wang, X Y Zhou, A B Zhang, Y Y Shi, L Liu, Y G Wang, Y L Fang, Y J Lv, Z H Feng, B Zhang
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