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7.6 V threshold voltage high-performance normally-off al $_textrm2$ O $_textrm3$ /GaN MOSFET achieved by interface charge engineering
An efficient approach to engineering the Al2O3/GaN positive interface fixed charges by post-dielectric annealing in nitrogen is …
Qi Zhou, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, Bo Zhang
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Lateral AlGaN/GaN diode with MIS‐gated hybrid anode for high‐sensitivity zero‐bias microwave detection
A zero-bias microwave detector using an AlGaN/GaN-on-Si lateral diode featuring a recessed metal/Al2O3/III-nitride (MIS) gated hybrid …
Qi Zhou, Li Liu, Xingye Zhou, Anbang Zhang, Yuanyuan Shi, Zeheng Wang, Yuan Gang Wang, Yulong Fang, Yuanjie Lv, Zhihong Feng, Bo Zhang
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