paper-conference

Crystalline Complex Oxide Membrane: Sub-1 nm CET Dielectrics for 2D Transistors
Jing-Kai Huang, Yi Wan, Junjie Shi, Ji Zhang, Zeheng Wang, Zi-Liang Yang, Bo-Chao Huang, Ya-Ping Chiu, Wenxuan Wang, Ni Yang, Yang Liu, Chun-Ho Lin, Xinwei Guan, Long Hu, Jack Yang, Danyang Wang, Vincent Tung, Kourosh Kalantar-Zadeh, Tom Wu, Xiaotao Zu, Liang Qiao, Sean Li, Lain-Jong Li
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A novel GaN bidirectional current rectifier using self-quantum channel modulation
In high power Light-Emitting Diode (LED) illumination, the alternating current input and LED-compatible monolithic integration of the …
Zeheng Wang, Shengji Wang, Yihao Li, Yuanzhe Yao
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A novel enhancement-type GaN HEMT with high power transmission capability using extended quantum well channel
A novel enhancement-Type GaN HEMT with high power transmission capability using three-dimensional electron sea is proposed and …
Zeheng Wang, Chengyu Che, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao
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A novel high-performance bipolar GaN diode realized by broadened quantum well and three-dimensional carrier sea
In this paper, we firstly report a GaN-based bipolar diode with a p-n junction generated by Three-Dimensional Electron Sea and …
Zeheng Wang, Chao Chen, Shengji Wang, Liang Li, Yuanzhe Yao
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A monolithic integration scheme for GaN-based power converter integrated circuit using fully-schottky versatile hemts
A monolithic integration scheme for GaN-based power converter integrated circuit is proposed in this paper, wherein the scheme is based …
Zeheng Wang, Yi Luo, Chao Chen, Zhanzhuang Chen, Xuewei Feng, Yuanzhe Yao
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A LED-compatible current regulator with integrated electrically adjustable sensor
In this letter, a high-performance electrically adjust-Able current regulator is proposed on the LED-compatible AlGaN/GaN platform. The …
Zeheng Wang, Shengji Wang, Yuanzhe Yao
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Modelling on GaN power HEMT with condideration of subthreshold swing using artificial intelligence technology
In this paper, we report a model to AlGaN/GaN power HEMT based on the artificial intelligence (AI) technology, wherein the model …
Yuanzhe Yao, Zeheng Wang, Liang Li, Di Yang, Shengji Wang, Xinghuan Chen
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A novel high performance lateral AlGaN/GaN schottky barrier diode using highly effective field plate with polarization enhanced channel
In this paper, we propose a novel high performance lateral AlGaN/GaN Schottky barrier diode realized by InGaN polarization enhanced …
Zeheng Wang, Xuewei Feng, Di Yang, Chao Chen, Zirui Wang, Xinghuan Chen, Chunpeng Wang, Shengji Wang, Jun Cao, Yuanzhe Yao
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High sensitivity hall-effect sensor on the AlGaN/GaN fin-HEMT structure
Hall-effect sensors are widely used for proximity sensing, control and condition monitoring purposes. Current technology makes use of …
Y.C. Liang, K. Ren, S.J. Chua, Z. Wang, X. Gong
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0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substrate
Yi Yang, Qi Zhou, Yuanyuan Shi, Zeheng Wang, Li Liu, Kai Hu, Ruopu Zhu, Wanjun Chen, Bo Zhang
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