paper-conference | Zeheng Wang's pagehttps://website.zeheng.wang/publication-type/paper-conference/paper-conferenceHugo Blox Builder (https://hugoblox.com)en-usThu, 01 Dec 2022 00:00:00 +0000https://website.zeheng.wang/media/logo_hudf9db1ae868b292887370e76c4066cd5_39550_300x300_fit_lanczos_3.pngpaper-conferencehttps://website.zeheng.wang/publication-type/paper-conference/Crystalline Complex Oxide Membrane: Sub-1 nm CET Dielectrics for 2D Transistorshttps://website.zeheng.wang/publication/huang-crystalline-2022/Thu, 01 Dec 2022 00:00:00 +0000https://website.zeheng.wang/publication/huang-crystalline-2022/A novel GaN bidirectional current rectifier using self-quantum channel modulationhttps://website.zeheng.wang/publication/wang-2021-novel/Thu, 01 Jul 2021 00:00:00 +0000https://website.zeheng.wang/publication/wang-2021-novel/A novel enhancement-type GaN HEMT with high power transmission capability using extended quantum well channelhttps://website.zeheng.wang/publication/wang-2020-novelb/Sun, 01 Nov 2020 00:00:00 +0000https://website.zeheng.wang/publication/wang-2020-novelb/A novel high-performance bipolar GaN diode realized by broadened quantum well and three-dimensional carrier seahttps://website.zeheng.wang/publication/wang-2020-novela/Sun, 01 Nov 2020 00:00:00 +0000https://website.zeheng.wang/publication/wang-2020-novela/A monolithic integration scheme for GaN-based power converter integrated circuit using fully-schottky versatile hemtshttps://website.zeheng.wang/publication/wang-monolithic-2020/Wed, 01 Jan 2020 00:00:00 +0000https://website.zeheng.wang/publication/wang-monolithic-2020/A LED-compatible current regulator with integrated electrically adjustable sensorhttps://website.zeheng.wang/publication/wang-led-compatible-2019/Tue, 01 Oct 2019 00:00:00 +0000https://website.zeheng.wang/publication/wang-led-compatible-2019/Modelling on GaN power HEMT with condideration of subthreshold swing using artificial intelligence technologyhttps://website.zeheng.wang/publication/yao-modelling-2019/Sat, 01 Jun 2019 00:00:00 +0000https://website.zeheng.wang/publication/yao-modelling-2019/A novel high performance lateral AlGaN/GaN schottky barrier diode using highly effective field plate with polarization enhanced channelhttps://website.zeheng.wang/publication/wang-2019-novel/Fri, 01 Mar 2019 00:00:00 +0000https://website.zeheng.wang/publication/wang-2019-novel/High sensitivity hall-effect sensor on the AlGaN/GaN fin-HEMT structurehttps://website.zeheng.wang/publication/liang-2018-high/Sat, 01 Sep 2018 00:00:00 +0000https://website.zeheng.wang/publication/liang-2018-high/0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substratehttps://website.zeheng.wang/publication/yi-yang-2016-vt/Sat, 01 Oct 2016 00:00:00 +0000https://website.zeheng.wang/publication/yi-yang-2016-vt/High performance normally-off al2O3/GaN mosfets with record high threshold voltage by interface charge engineeringhttps://website.zeheng.wang/publication/ruopu-zhu-2016-high/Sat, 01 Oct 2016 00:00:00 +0000https://website.zeheng.wang/publication/ruopu-zhu-2016-high/Threshold voltage modulation by interface charge engineering for high performance normally-off GaN mosfets with high faulty turn-on immunityhttps://website.zeheng.wang/publication/zhou-2016-threshold/Wed, 01 Jun 2016 00:00:00 +0000https://website.zeheng.wang/publication/zhou-2016-threshold/