paper-conference

High performance normally-off al2O3/GaN mosfets with record high threshold voltage by interface charge engineering
An efficient approach to engineering the Al2O3/GaN positive interface fixed charges (Qit+) by post-dielectric annealing in nitrogen is …
Ruopu Zhu, Qi Zhou, A. Zhang, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, Wanjun Chen, Bo Zhang
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Threshold voltage modulation by interface charge engineering for high performance normally-off GaN mosfets with high faulty turn-on immunity
An efficient approach to engineering the Al2O3/GaN positive interface fixed charges (Qit+) by postdielectric annealing in nitrogen is …
Qi Zhou, Anbang Zhang, R. Zhu, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, Wanjun Chen, Bo Zhang
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