Publications

(2023). Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel. Micromachines.

Cite DOI URL

(2023). A FIN-LDMOS with Bulk Electron Accumulation Effect. Micromachines.

Cite DOI URL

(2023). Jellybean Quantum Dots in Silicon for Qubit Coupling and On‐Chip Quantum Chemistry. Advanced Materials.

Cite DOI URL

(2023). Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques. IEEE Transactions on Electron Devices.

Cite DOI URL

(2023). Analytically Modeling the Effect of Buffer Charge on the 2DEG Density in AlGaN/GaN HEMT. IEEE Transactions on Electron Devices.

Cite DOI URL

(2022). Crystalline Complex Oxide Membrane: Sub-1 nm CET Dielectrics for 2D Transistors. 2022 International Electron Devices Meeting (IEDM).

Cite DOI URL

(2022). An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode. IEEE Transactions on Electron Devices.

Cite DOI URL

(2022). High-κ perovskite membranes as insulators for two-dimensional transistors. Nature.

Cite DOI URL

(2021). A novel GaN bidirectional current rectifier using self-quantum channel modulation. 2021 9th International Symposium on Next Generation Electronics, ISNE 2021.

Cite DOI URL

(2021). A machine learning-assisted model for GaN ohmic contacts regarding the fabrication processes. IEEE Transactions on Electron Devices.

Cite DOI URL

(2021). An analytical model on the gate control capability in p-GaN gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps. Journal of Physics D: Applied Physics.

Cite DOI URL

(2021). Simulation study of an ultralow switching loss p-GaN gate HEMT with dynamic charge storage mechanism. IEEE Transactions on Electron Devices.

Cite DOI

(2021). A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology. Semiconductor Science and Technology.

Cite DOI URL

(2020). A novel high-performance bipolar GaN diode realized by broadened quantum well and three-dimensional carrier sea. 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings.

Cite DOI URL

(2020). A novel enhancement-type GaN HEMT with high power transmission capability using extended quantum well channel. 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings.

Cite DOI URL

(2020). Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors. Journal of Physics D: Applied Physics.

Cite DOI URL

(2020). Approaching ultra-low turn-on voltage in GaN lateral diode. Semiconductor Science and Technology.

Cite DOI URL

(2020). A monolithic integration scheme for GaN-based power converter integrated circuit using fully-schottky versatile hemts. IOP Conference Series: Materials Science and Engineering.

Cite DOI URL

(2019). An ontology-based artificial intelligence model for medicine side-effect prediction: taking traditional chinese medicine as an example. Computational and Mathematical Methods in Medicine.

Cite DOI URL

(2019). A LED-compatible current regulator with integrated electrically adjustable sensor. 2019 8th International Symposium on Next Generation Electronics, ISNE 2019.

Cite DOI URL

(2019). Design and optimization on a novelhigh-performance ultra-thin barrier AlGaN/GaN power HEMT with local charge compensation trench. Applied Sciences (Switzerland).

Cite DOI URL

(2019). Modelling on GaN power HEMT with condideration of subthreshold swing using artificial intelligence technology. 2019 International Conference on IC Design and Technology (ICICDT).

Cite DOI URL

(2019). A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensor. IEEE Transactions on Electron Devices.

Cite DOI URL

(2019). A novel high performance lateral AlGaN/GaN schottky barrier diode using highly effective field plate with polarization enhanced channel. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019.

Cite DOI URL

(2019). A novel technology for turn-on voltage reduction of high-performance lateral heterojunction diode with source-gate shorted anode. Superlattices and Microstructures.

Cite DOI URL

(2018). High sensitivity hall-effect sensor on the AlGaN/GaN fin-HEMT structure. Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.

Cite DOI URL

(2018). Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate. Superlattices and Microstructures.

Cite DOI URL

(2018). Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage. Superlattices and Microstructures.

Cite DOI URL

(2018). Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate. Superlattices and Microstructures.

Cite DOI URL

(2017). Simulation study of high‐reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode. Micro & Nano Letters.

Cite DOI URL

(2017). Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode. Superlattices and Microstructures.

Cite DOI URL

(2016). High performance normally-off al2O3/GaN mosfets with record high threshold voltage by interface charge engineering. 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings.

Cite DOI URL

(2016). 0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substrate. 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Cite DOI URL

(2016). Threshold voltage modulation by interface charge engineering for high performance normally-off GaN mosfets with high faulty turn-on immunity. 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Cite DOI URL

(2016). Physics of dynamic threshold voltage and steep subthreshold swing in al $_textrm2$ O $_textrm3$ –InAlN–GaN moshemts. Semiconductor Science and Technology.

Cite DOI URL

(2016). 7.6 V threshold voltage high-performance normally-off al $_textrm2$ O $_textrm3$ /GaN MOSFET achieved by interface charge engineering. IEEE Electron Device Letters.

Cite DOI URL

(2015). Lateral AlGaN/GaN diode with MIS‐gated hybrid anode for high‐sensitivity zero‐bias microwave detection. Electronics Letters.

Cite DOI URL