AlGaN/GaN | Zeheng Wang's pagehttps://website.zeheng.wang/tag/algan/gan/AlGaN/GaNHugo Blox Builder (https://hugoblox.com)en-ushttps://website.zeheng.wang/media/logo_hudf9db1ae868b292887370e76c4066cd5_39550_300x300_fit_lanczos_3.pngAlGaN/GaNhttps://website.zeheng.wang/tag/algan/gan/A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technologyhttps://website.zeheng.wang/publication/wang-2021-low/Fri, 01 Jan 2021 00:00:00 +0000https://website.zeheng.wang/publication/wang-2021-low/A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technologyhttps://website.zeheng.wang/publication/wang-2021-low/Fri, 01 Jan 2021 00:00:00 +0000https://website.zeheng.wang/publication/wang-2021-low/Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistorshttps://website.zeheng.wang/publication/wang-charge-2020/Wed, 01 Jul 2020 00:00:00 +0000https://website.zeheng.wang/publication/wang-charge-2020/Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistorshttps://website.zeheng.wang/publication/wang-charge-2020/Wed, 01 Jul 2020 00:00:00 +0000https://website.zeheng.wang/publication/wang-charge-2020/Approaching ultra-low turn-on voltage in GaN lateral diodehttps://website.zeheng.wang/publication/wang-2020-approachinga/Wed, 01 Jan 2020 00:00:00 +0000https://website.zeheng.wang/publication/wang-2020-approachinga/Approaching ultra-low turn-on voltage in GaN lateral diodehttps://website.zeheng.wang/publication/wang-2020-approachinga/Wed, 01 Jan 2020 00:00:00 +0000https://website.zeheng.wang/publication/wang-2020-approachinga/A LED-compatible current regulator with integrated electrically adjustable sensorhttps://website.zeheng.wang/publication/wang-led-compatible-2019/Tue, 01 Oct 2019 00:00:00 +0000https://website.zeheng.wang/publication/wang-led-compatible-2019/A LED-compatible current regulator with integrated electrically adjustable sensorhttps://website.zeheng.wang/publication/wang-led-compatible-2019/Tue, 01 Oct 2019 00:00:00 +0000https://website.zeheng.wang/publication/wang-led-compatible-2019/Modelling on GaN power HEMT with condideration of subthreshold swing using artificial intelligence technologyhttps://website.zeheng.wang/publication/yao-modelling-2019/Sat, 01 Jun 2019 00:00:00 +0000https://website.zeheng.wang/publication/yao-modelling-2019/Modelling on GaN power HEMT with condideration of subthreshold swing using artificial intelligence technologyhttps://website.zeheng.wang/publication/yao-modelling-2019/Sat, 01 Jun 2019 00:00:00 +0000https://website.zeheng.wang/publication/yao-modelling-2019/A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensorhttps://website.zeheng.wang/publication/wang-high-performance-2019/Mon, 01 Apr 2019 00:00:00 +0000https://website.zeheng.wang/publication/wang-high-performance-2019/A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensorhttps://website.zeheng.wang/publication/wang-high-performance-2019/Mon, 01 Apr 2019 00:00:00 +0000https://website.zeheng.wang/publication/wang-high-performance-2019/A novel high performance lateral AlGaN/GaN schottky barrier diode using highly effective field plate with polarization enhanced channelhttps://website.zeheng.wang/publication/wang-2019-novel/Fri, 01 Mar 2019 00:00:00 +0000https://website.zeheng.wang/publication/wang-2019-novel/A novel high performance lateral AlGaN/GaN schottky barrier diode using highly effective field plate with polarization enhanced channelhttps://website.zeheng.wang/publication/wang-2019-novel/Fri, 01 Mar 2019 00:00:00 +0000https://website.zeheng.wang/publication/wang-2019-novel/7.6 V threshold voltage high-performance normally-off al $_textrm2$ O $_textrm3$ /GaN MOSFET achieved by interface charge engineeringhttps://website.zeheng.wang/publication/zhou-7-6-2016/Mon, 01 Feb 2016 00:00:00 +0000https://website.zeheng.wang/publication/zhou-7-6-2016/7.6 V threshold voltage high-performance normally-off al $_textrm2$ O $_textrm3$ /GaN MOSFET achieved by interface charge engineeringhttps://website.zeheng.wang/publication/zhou-7-6-2016/Mon, 01 Feb 2016 00:00:00 +0000https://website.zeheng.wang/publication/zhou-7-6-2016/