AlGaN/GaN

A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensor
Zeheng Wang, Shengji Wang, Zhenwei Zhang, Chunpeng Wang, Di Yang, Xinghuan Chen, Zirui Wang, Jun Cao, Yuanzhe Yao
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A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensor
Zeheng Wang, Shengji Wang, Zhenwei Zhang, Chunpeng Wang, Di Yang, Xinghuan Chen, Zirui Wang, Jun Cao, Yuanzhe Yao
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A novel high performance lateral AlGaN/GaN schottky barrier diode using highly effective field plate with polarization enhanced channel
In this paper, we propose a novel high performance lateral AlGaN/GaN Schottky barrier diode realized by InGaN polarization enhanced …
Zeheng Wang, Xuewei Feng, Di Yang, Chao Chen, Zirui Wang, Xinghuan Chen, Chunpeng Wang, Shengji Wang, Jun Cao, Yuanzhe Yao
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A novel high performance lateral AlGaN/GaN schottky barrier diode using highly effective field plate with polarization enhanced channel
In this paper, we propose a novel high performance lateral AlGaN/GaN Schottky barrier diode realized by InGaN polarization enhanced …
Zeheng Wang, Xuewei Feng, Di Yang, Chao Chen, Zirui Wang, Xinghuan Chen, Chunpeng Wang, Shengji Wang, Jun Cao, Yuanzhe Yao
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7.6 V threshold voltage high-performance normally-off al $_textrm2$ O $_textrm3$ /GaN MOSFET achieved by interface charge engineering
An efficient approach to engineering the Al2O3/GaN positive interface fixed charges by post-dielectric annealing in nitrogen is …
Qi Zhou, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, Bo Zhang
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7.6 V threshold voltage high-performance normally-off al $_textrm2$ O $_textrm3$ /GaN MOSFET achieved by interface charge engineering
An efficient approach to engineering the Al2O3/GaN positive interface fixed charges by post-dielectric annealing in nitrogen is …
Qi Zhou, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, Bo Zhang
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