electron-mobility transistor (HEMT)

Simulation study of an ultralow switching loss p-GaN gate HEMT with dynamic charge storage mechanism

In this article, a dynamic charge storage mechanism is proposed for designing the p-GaN gate dynamic charge storage …

Fangzhou Wang, Wanjun Chen, Xiaorui Xu, Ruize Sun, Zeheng Wang, Yun Xia, Yajie Xin, Chao Liu, Qi Zhou, Bo Zhang