GaN

A novel GaN bidirectional current rectifier using self-quantum channel modulation
In high power Light-Emitting Diode (LED) illumination, the alternating current input and LED-compatible monolithic integration of the …
Zeheng Wang, Shengji Wang, Yihao Li, Yuanzhe Yao
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On the baliga’s figure-of-merits (BFOM) enhancement of a novel GaN nano-pillar vertical field effect transistor (FET) with 2DEG channel and patterned substrate
A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing the on-state resistance (RON) and substrate …
Zeheng Wang, Zirui Wang, Zhenwei Zhang, Di Yang, Yuanzhe Yao
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Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study
A novel recess-free enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) is proposed. The device features a …
Zeheng Wang
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Design and optimization on a novelhigh-performance ultra-thin barrier AlGaN/GaN power HEMT with local charge compensation trench
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge …
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao
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7.6 V threshold voltage high-performance normally-off al $_textrm2$ O $_textrm3$ /GaN MOSFET achieved by interface charge engineering
An efficient approach to engineering the Al2O3/GaN positive interface fixed charges by post-dielectric annealing in nitrogen is …
Qi Zhou, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, Bo Zhang
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