<?xml version="1.0" encoding="utf-8" standalone="yes"?><rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom"><channel><title>GaN | Zeheng Wang's page</title><link>https://website.zeheng.wang/tag/gan/</link><atom:link href="https://website.zeheng.wang/tag/gan/index.xml" rel="self" type="application/rss+xml"/><description>GaN</description><generator>Hugo Blox Builder (https://hugoblox.com)</generator><language>en-us</language><lastBuildDate>Thu, 01 Jul 2021 00:00:00 +0000</lastBuildDate><image><url>https://website.zeheng.wang/media/logo_hudf9db1ae868b292887370e76c4066cd5_39550_300x300_fit_lanczos_3.png</url><title>GaN</title><link>https://website.zeheng.wang/tag/gan/</link></image><item><title>A novel GaN bidirectional current rectifier using self-quantum channel modulation</title><link>https://website.zeheng.wang/publication/wang-2021-novel/</link><pubDate>Thu, 01 Jul 2021 00:00:00 +0000</pubDate><guid>https://website.zeheng.wang/publication/wang-2021-novel/</guid><description/></item><item><title>On the baliga’s figure-of-merits (BFOM) enhancement of a novel GaN nano-pillar vertical field effect transistor (FET) with 2DEG channel and patterned substrate</title><link>https://website.zeheng.wang/publication/wang-2019-baligaa/</link><pubDate>Sun, 01 Dec 2019 00:00:00 +0000</pubDate><guid>https://website.zeheng.wang/publication/wang-2019-baligaa/</guid><description/></item><item><title>Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study</title><link>https://website.zeheng.wang/publication/wang-2019-proposal/</link><pubDate>Sun, 01 Dec 2019 00:00:00 +0000</pubDate><guid>https://website.zeheng.wang/publication/wang-2019-proposal/</guid><description/></item><item><title>Design and optimization on a novelhigh-performance ultra-thin barrier AlGaN/GaN power HEMT with local charge compensation trench</title><link>https://website.zeheng.wang/publication/wang-2019-design/</link><pubDate>Mon, 01 Jul 2019 00:00:00 +0000</pubDate><guid>https://website.zeheng.wang/publication/wang-2019-design/</guid><description/></item><item><title>7.6 V threshold voltage high-performance normally-off al $_textrm2$ O $_textrm3$ /GaN MOSFET achieved by interface charge engineering</title><link>https://website.zeheng.wang/publication/zhou-7-6-2016/</link><pubDate>Mon, 01 Feb 2016 00:00:00 +0000</pubDate><guid>https://website.zeheng.wang/publication/zhou-7-6-2016/</guid><description/></item></channel></rss>