HEMT

Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study
A novel recess-free enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) is proposed. The device features a …
Zeheng Wang
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Design and optimization on a novelhigh-performance ultra-thin barrier AlGaN/GaN power HEMT with local charge compensation trench
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge …
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao
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Modelling on GaN power HEMT with condideration of subthreshold swing using artificial intelligence technology
In this paper, we report a model to AlGaN/GaN power HEMT based on the artificial intelligence (AI) technology, wherein the model …
Yuanzhe Yao, Zeheng Wang, Liang Li, Di Yang, Shengji Wang, Xinghuan Chen
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