Local charge compensation trench

Design and optimization on a novelhigh-performance ultra-thin barrier AlGaN/GaN power HEMT with local charge compensation trench
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge …
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao
Cite DOI URL