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A machine learning-assisted model for GaN ohmic contacts regarding the fabrication processes
Gallium nitride (GaN) devices have been successfully commercialized due to their superior performance, especially their high-power …
Zeheng Wang
,
Liang Li
,
Yuanzhe Yao
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Modelling on GaN power HEMT with condideration of subthreshold swing using artificial intelligence technology
In this paper, we report a model to AlGaN/GaN power HEMT based on the artificial intelligence (AI) technology, wherein the model …
Yuanzhe Yao
,
Zeheng Wang
,
Liang Li
,
Di Yang
,
Shengji Wang
,
Xinghuan Chen
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