MOSFETs

7.6 V threshold voltage high-performance normally-off al $_textrm2$ O $_textrm3$ /GaN MOSFET achieved by interface charge engineering
An efficient approach to engineering the Al2O3/GaN positive interface fixed charges by post-dielectric annealing in nitrogen is …
Qi Zhou, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, Bo Zhang
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