p-GaN layer

Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors
In this paper, input capacitance (C ISS) of p-GaN gate AlGaN/GaN power high-electron-mobility transistors (HEMTs) is systemically …
Fangzhou Wang, Wanjun Chen, Xuan Li, Ruize Sun, Xiaorui Xu, Yajie Xin, Zeheng Wang, Yijun Shi, Yun Xia, Chao Liu, Jianjun Zhou, Qi Zhou, Bo Zhang
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