<?xml version="1.0" encoding="utf-8" standalone="yes"?><rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom"><channel><title>p-GaN layer | Zeheng Wang's page</title><link>https://website.zeheng.wang/tag/p-gan-layer/</link><atom:link href="https://website.zeheng.wang/tag/p-gan-layer/index.xml" rel="self" type="application/rss+xml"/><description>p-GaN layer</description><generator>Hugo Blox Builder (https://hugoblox.com)</generator><language>en-us</language><lastBuildDate>Wed, 01 Jul 2020 00:00:00 +0000</lastBuildDate><image><url>https://website.zeheng.wang/media/logo_hudf9db1ae868b292887370e76c4066cd5_39550_300x300_fit_lanczos_3.png</url><title>p-GaN layer</title><link>https://website.zeheng.wang/tag/p-gan-layer/</link></image><item><title>Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors</title><link>https://website.zeheng.wang/publication/wang-charge-2020/</link><pubDate>Wed, 01 Jul 2020 00:00:00 +0000</pubDate><guid>https://website.zeheng.wang/publication/wang-charge-2020/</guid><description/></item></channel></rss>