Ultra-thin barrier

Approaching ultra-low turn-on voltage in GaN lateral diode
Besides the commercial success in power electronics, GaN-based devices are also considered as a promising candidate in sensors or …
Zeheng Wang, Di Yang, Junjie Shi, Yuanzhe Yao
Cite DOI URL
Design and optimization on a novelhigh-performance ultra-thin barrier AlGaN/GaN power HEMT with local charge compensation trench
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge …
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao
Cite DOI URL